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��ʲô�ǻԹ�ŵ��׷��GD-MS��

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��Թ�ŵ��Դ��ͨ��һ��ٵĶ��(ͨ��ѡ�øߴ��Ar)��֮��ʩ��һ��糡��ﵽ�㹻�ߵĵ�ѹ(700~1200V)ʱ��屻��롣��Ĵ��Ӻ��ڵ糡��·ֱ��෴��٣��ԭ�ӵ��ײ��̷��ĻԹ��ڷŵ��γ�"��"��ײ��(��Ʒ)��ͨ��ܴ��ʹ��䡣��ڽ��͵��Ĳ��裬��RSF��һ��ڡ�

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��Electron Ionization ��ӵ��룺

��Sample+ e- ⇒ Sample+ + 2e-

��Penning Ionization ��ӻ��

��Sample + Ar∗ ⇒ Sample+ + Ar + e-

Element GD Plus GD-MSӦ��ʵ��

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��Element GD Plus GD-MS�ɰ��ҵ��û��Ӧ�ļ��ƽ��ÿ��Ʒ��Ҫ10~20mins��ɡ��ԭ�ϵ��ղ�Ʒ��ȫ��Ǻ��Ԫ�ؼ��(QA/QC) ��

����ͭ��ʼ��Ƭ����ͨ��Ϊ0.Xmm(X00 μm)��Element GD Plus GD-MS��ص���Դ��Pulsed mode����ܹ�ʵ��ʹ�ý�С�Ľ��书�ʶԴ��ϱ��Ʒ��в��ԣ��Ӧ��ڱ�Ĥ��Ʋ��ϵ�GD-MS��С�

��Ϊ��ܹ��ֳ��ڲ�ͬ�Ĺ��ղ��£�Chip_1#��Chip_2#��Ʒ��Ԫ�ص��ֲ�� (��ͼ��ʾ)��10 sec��ԴԤ��(Pre-Sputtering)��ʱ��~18mins/sample��Ԥ�ƽ��~13.5 μm��

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��Ϊ�˷��Ʒ��SiCͿ��(X00 μm)�Ĺؼ��Ԫ�ص��ֲ��(��ͼ��ʾ)��ʹ��Element GD Plus GD-MS����ģʽ��Pulsed mode��Ʒ��潦��~60 mins��зֱ��µĻ��ź�ǿ��(28Si)�ȶ��~4.2E8cps��~15 μm(רҵ��)��

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